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Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09)
Pokorná, Zuzana ; Mika, Filip
ISI ASCR in Brno is primarily a methodological institute creating and developing new experimental methods for several areas of physics, chemistry and biomedicine. Among these, methodology of the scanning electron microscopy occupies an important position. One of long time projects concerns microscopy with very slow electrons, much slower than what was for decades, until quite recently, available at the market of microscopes. Demonstration of new instrumental methods needs to have good partners in application areas, willing to enter unknown territories. On this basis, the collaboration between the University of Toyama and ISI in Brno exists and flourishes, producing plenty of common results and success stories.
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Orientation of Grains in the Al-Mg-Si-Mn Alloy by Scanning Low Energy Electron Microscopy
Müllerová, Ilona ; Matsuda, K. ; Horiba, K. ; Mikmeková, Šárka ; Frank, Luděk
Electron Backscatter Diffraction (EBSD) is a technique allowing the crystallographic infomiation to be obtained from samples in the scanning electron microscope (SEM). The main disadvantages of this method include the specimen tilt by 70°, requiring to operate at large working distances and hence with reduced lateral resolution, and a long acquisition time needed to obtain the full infomnation about grain orientations. However, the crystal orientation can be recognized upon energy dependence of the electron reflectance in the very low energy range. Information can be acquired at a high lateral resolution, high contrast and short acquisition time in a dedicated SEM equipped by the cathode lens.
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Profiling of N-Type Dopants in Silicon Based Structures
Hovorka, Miloš ; Mika, Filip ; Frank, Luděk ; Mikulík, P.
We have focused on variously doped n-type pattems on a lightly doped p-type substrate because of lack of data for these structures. We have designed and prepared planar structures of this kind at the university clean room. Combination of the UHV SEM and PEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and explanation of their contrast with respect to the p-type substrate. In addition to the SEM observations at very low energies (down to the units of eV), we performed the laterally resolved threshold and soft X-ray spectroscopies in a PEEM equipped with an energy filter.
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